National Semiconductor - 2N3819/D27Z

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Minimum DS Breakdown Voltage: 30 V; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: TIN; JEDEC-95 Code: TO-92; Maximum Drain Current (ID): .025 A;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Minimum DS Breakdown Voltage: 6 V; No. of Elements: 2; JESD-30 Code: R-PDSO-F6;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: C BAND; Package Shape: RECTANGULAR; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Maximum Power Dissipation Ambient: .7 W; Minimum Power Gain (Gp): 8 dB;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: AMPLIFIER; Terminal Form: FLAT;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Maximum Feedback Capacitance (Crss): .035 pF; Package Body Material: PLASTIC/EPOXY;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Elements: 2; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;

BF2030WH6814XTSA1 by Infineon Technologies is a N-CHANNEL RF Small Signal FET with PLASTIC/EPOXY package. It operates in DUAL GATE, DEPLETION MODE and has ULTRA HIGH FREQUENCY BAND. This transistor is commonly used as an AMPLIFIER in various applications.

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

ATF-531P8-BLK by Broadcom is an N-channel RF FET transistor with a min DS breakdown voltage of 7V. It has a power gain of 18.5 dB and is commonly used as an amplifier in C band applications.

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 30;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; No. of Elements: 1; Reference Standard: MIL-19500/375G;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): .03 A; Case Connection: SOURCE;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; JESD-30 Code: O-PBCY-T3; Minimum DS Breakdown Voltage: 25 V;