Motorola - MRF392

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 18 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 8 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Collector Current (IC): .06 A; No. of Terminals: 6;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Case Connection: EMITTER; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .75 A; Maximum Collector-Emitter Voltage: 36 V; Transistor Element Material: SILICON;

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Shape: RECTANGULAR;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum DC Current Gain (hFE): 40;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .08 A; Transistor Application: AMPLIFIER; JESD-30 Code: O-CRMW-F4;

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Qualification: Qualified; Terminal Finish: Gold (Au);

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 275 MHz; Maximum Collector Current (IC): 6.5 A; Qualification: Not Qualified;

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Peak Reflow Temperature (C): 260;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 6; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: C BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1600 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 16 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum Power Gain (Gp): 7 dB; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 15;

RF Power Bipolar Transistors;

C3-28 by Asi Semiconductor is a NPN RF BJT with 4 terminals, 10W power dissipation, and fT of 600MHz. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal package and silicon transistor element. Operates at max temp of 200°C in a single configuration with flat terminals.