Motorola - 2N3823

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Qualification: Not Qualified; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; No. of Terminals: 3; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; No. of Terminals: 4; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; JESD-30 Code: R-PDSO-G3; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .03 pF; Additional Features: LOW NOISE;

BF2030WH6814XTSA1 by Infineon Technologies is a N-CHANNEL RF Small Signal FET with PLASTIC/EPOXY package. It operates in DUAL GATE, DEPLETION MODE and has ULTRA HIGH FREQUENCY BAND. This transistor is commonly used as an AMPLIFIER in various applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Qualification: Not Qualified; Terminal Finish: Tin (Sn);

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Minimum DS Breakdown Voltage: 6 V; No. of Elements: 2; JESD-30 Code: R-PDSO-F6;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;

N-CHANNEL; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A; No. of Terminals: 6;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .13 W;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 200 Cel; Package Shape: ROUND; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Maximum Drain Current (ID): .025 A; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Operating Mode: DUAL GATE, DEPLETION MODE; Terminal Form: GULL WING;