Microsemi - JANTX2N3822

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-30 Code: O-PBCY-T3; No. of Terminals: 3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Terminal Position: DUAL; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; JEDEC-95 Code: TO-92; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 30 V; Operating Mode: DEPLETION MODE;

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: TIN LEAD; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 2; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; No. of Elements: 1; Additional Features: HIGH RELIABILITY;

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Maximum Operating Temperature: 175 Cel; Case Connection: SHIELD;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Elements: 1; Terminal Position: DUAL;

N-CHANNEL; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .055 A; Maximum Drain Current (ID): .055 A; Maximum Power Dissipation Ambient: .25 W;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Operating Mode: DEPLETION MODE; Maximum Power Dissipation Ambient: .35 W;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Transistor Element Material: SILICON; No. of Elements: 1;