Microsemi - JAN2N3822

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Finish: TIN LEAD; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 4;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; Terminal Finish: MATTE TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; No. of Elements: 1;

NXP Semiconductors' CLF1G0035-100PU is an N-CHANNEL RF FET with 150V DS breakdown voltage. It features a common source configuration, suitable for S BAND applications like amplifiers. The transistor utilizes high electron mobility GaN technology in a ceramic-metal package with flange mount style.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .04 A; No. of Elements: 2; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; No. of Terminals: 4; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: O-PRDB-F4; Transistor Element Material: SILICON; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e4; Package Shape: ROUND; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .03 A; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .025 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-236AB;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Feedback Capacitance (Crss): .8 pF; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: JUNCTION; Additional Features: LOW NOISE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Terminal Form: GULL WING;