Micron Technology - EBJ40UG8EFU5-GNL-F

IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.

Micron Technology's MT41K128M16JT-125:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package with grid array style is suitable for applications requiring high memory density and fast data processing.

MT41K256M16TW-093:P by Micron Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a nominal voltage of 1.35V and has a max operating temperature of 95°C. This memory module is commonly used in applications requiring high-speed synchronous operation, such as servers and data centers.

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Width: 8;

Micron Technology's MT48LC8M16A2P-6A:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B96;

DDR3 DRAM; No. of Terminals: 136; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Standby Current: .1 Amp;

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .65 mm; Minimum Supply Voltage (Vsup): 1.14 V;

Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: LFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

Alliance Memory's AS4C64M16D3LB-12BINTR is a DDR3L DRAM with 64MX16 organization and 1.35V nominal voltage. It operates in synchronous mode, has self-refresh capability, and is suitable for industrial applications requiring high memory density.

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

Micron Technology's MT48LC16M16A2P-75IT:D is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package for space-constrained designs.

DDR3 DRAM; No. of Terminals: 96; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Interleaved Burst Length: 8;

MT48LC16M16A2P-6AAAT:G by Micron Technology is a 16MX16 Synchronous DRAM with 268MB memory density. It operates at 3.3V, has a max access time of 5.4ns, and is suitable for industrial applications requiring fast and reliable memory performance.

Micron Technology's MT47H128M16RT-25EAIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This industrial-grade memory IC has a thin profile grid array package suitable for various applications requiring high-speed synchronous operation.