IXYS Corporation - SLMD121H08L

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Semiconductor Material: SILICON; Output Voltage (Open Circuit): .55 V; Active Area: 1.8 sq cm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): .47 V; Semiconductor Material: SILICON; Peak Wavelength (nm): 555; Active Area: 0.5 sq cm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Semiconductor Material: SILICON; Output Voltage (Open Circuit): 280 V; Active Area: 9.7 x 19.7 mm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Output Voltage (Open Circuit): 280 V; Semiconductor Material: SILICON; Maximum Operating Temperature: 100 Cel;

GENERAL-PURPOSE PHOTOVOLTAIC CELL;

Photovoltaic Cells;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): .55 V; Semiconductor Material: SILICON; Peak Wavelength (nm): 900; Active Area: 0.2 sq cm;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): .55 V; Peak Wavelength (nm): 900; Active Area: 0.2 sq cm; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Active Area: 0.5 sq cm; Peak Wavelength (nm): 900; Output Voltage (Open Circuit): .55 V; Semiconductor Material: SILICON;

GENERAL-PURPOSE PHOTOVOLTAIC CELL;

PHOTOVOLTAIC SOLAR CELL;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 555; Semiconductor Material: SILICON; Active Area: 1.8 sq cm; Output Voltage (Open Circuit): .47 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: SILICON; Active Area: 0.1 sq cm; Peak Wavelength (nm): 900; Output Voltage (Open Circuit): .55 V;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Output Voltage (Open Circuit): 260 V; Peak Wavelength (nm): 850; Semiconductor Material: SILICON;

PHOTOVOLTAIC CELL FOR INFRARED DETECTION; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;

GENERAL-PURPOSE PHOTOVOLTAIC CELL;

PHOTOVOLTAIC CELL FOR INFRARED DETECTION; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 850; Minimum Operating Temperature: -65 Cel; Active Area: 154 sq mils; Maximum Operating Temperature: 125 Cel;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): 310 V; Semiconductor Material: SILICON; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Active Area: 1.3 sq cm; Output Voltage (Open Circuit): 250 V; Peak Wavelength (nm): 850;

GENERAL-PURPOSE PHOTOVOLTAIC CELL; Mounting Feature: THROUGH HOLE MOUNT; Output Voltage (Open Circuit): 280 V; Minimum Operating Temperature: -55 Cel; Active Area: 5.9 x 5.9 mm; Peak Wavelength (nm): 850;