IXYS Corporation - DE375-501N21A

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 118 W; Terminal Position: DUAL; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;

RF Power Field-Effect Transistors;

Wolfspeed's CGHV96050F2 is an N-CHANNEL RF Power FET for X BAND applications. Features include 100V DS Breakdown Voltage, 10dB Power Gain, and 6A Drain Current. Ideal for AMPLIFIER use with HIGH ELECTRON MOBILITY GaN technology, operating from -40°C to 125°C in a FLANGE MOUNT package.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;

NXP Semiconductors' MRFE6VP61K25HR6 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features a Common Source configuration, 1300W Max Power Dissipation, and is ideal for AMPLIFIER applications. This CERAMIC/METAL-SEALED COFIRED transistor has a RECTANGULAR package shape and operates in ENHANCEMENT MODE at up to 225°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Maximum Drain Current (ID): 7 A; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; No. of Terminals: 4;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 17.5 W; Maximum Drain Current (ID): .9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; JESD-30 Code: R-PDFM-F2; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Package Shape: RECTANGULAR; Additional Features: HIGH RELIABILITY;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Case Connection: SOURCE;