International Rectifier - IRGP4650D-EPBF

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; No. of Terminals: 5; Terminal Position: UPPER;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 170 A; JESD-30 Code: R-XUFM-X12;

FGH50N6S2D by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 75A max collector current. It has a turn-off time of 180ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at a max temperature of 150°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Maximum Collector Current (IC): 11 A; Terminal Form: THROUGH-HOLE;

FGH40N60SFTU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 150ns, making it suitable for power control applications requiring high-speed switching capabilities. With a max power dissipation of 290W and a max collector current of 80A, this transistor is ideal for applications where efficient power management is crucial.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): SMALL OUTLINE;

IRGP4650D-EPBF by Infineon Technologies is an N-CHANNEL IGBT with 42ns rise time, 54ns fall time, and 268W power dissipation. It operates at a max temp of 175°C and has a collector-emitter voltage of 600V. Ideal for high-power applications requiring fast switching capabilities.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Terminals: 7;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 319.2 W; Maximum Collector Current (IC): 80 A; Minimum Operating Temperature: -40 Cel;

Infineon's FS50R12W2T4B11BOMA1 is an N-CHANNEL IGBT with 1200V VCE, 83A IC, and 490ns toff. Ideal for POWER CONTROL applications due to its complex configuration and fast switching times of 185ns ton.

ROHM RGC80TSX8RGC11 is an N-CHANNEL IGBT with 1800V VCE, 80A IC, and 535W power dissipation. Ideal for power control applications, it features a built-in diode, 725ns turn-off time, and -40 to 175°C operating temperature range.

IHW20N135R5XKSA1 by Infineon is an N-CHANNEL IGBT with 1350V VCE, 40A IC, and 288W power dissipation. Ideal for power control applications, it features a built-in diode, 450ns turn-off time, and operates b/w -40 to 175°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): SMALL OUTLINE;

Infineon's FD300R06KE3HOSA1 is an N-CHANNEL IGBT with 600V max. collector-emitter voltage, 400A max. collector current, and 190ns nominal turn on time. Ideal for applications requiring high power switching such as motor drives, renewable energy systems, and industrial automation due to its single configuration with built-in diode and isolated case connection.

N-Channel; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 428 W; Maximum Collector Current (IC): 80 A; Maximum Operating Temperature: 175 Cel;

Infineon's FB30R06W1E3ENG IGBT features 600V VCE, 39A IC, and 115W power dissipation. Ideal for high-power applications like motor drives due to its fast turn-off time of 245ns and low VCEsat of 2V. With an operating temperature range from -40°C to 150°C, it ensures reliable performance in various environments.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 42 A; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1040 W; Maximum Collector Current (IC): 110 A; Maximum Collector-Emitter Voltage: 1700 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Transistor Application: POWER CONTROL;