Infineon Technologies - SRD00535H

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Reverse Breakdown Voltage: 32 V; Additional Features: DAYLIGHT FILTER; Shape: RECTANGULAR;

The Onsemi QSD2030F is a 5mm PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 50V. Ideal for IR applications, it has low dark current (10nA) and nominal light current (0.025mA).

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Size: 4.985 mm; Shape: ROUND; Maximum Dark Current: 60 nA;

Vishay Intertechnology's BPW41N is a 7.5mm PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has reverse breakdown voltage of 60V, and response time of 0.00000005s. Ideal for IR applications, it features matte tin finish and through hole mount.

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Maximum Operating Temperature: 85 Cel;

Photo Diodes; Shape: SQUARE; No. of Functions: 1; Configuration: SINGLE; Size: 20 mm;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaInAs; Maximum Operating Temperature: 60 Cel; Maximum Dark Current: 50 nA; Maximum Reverse Voltage: 80 V;

SFH203P by Infineon Technologies is a PIN photodiode with max response time of 5ns, reverse voltage of 50V, and operating temp range from -55°C to 100°C. Ideal for optoelectronic applications requiring fast and precise light detection in various environments.

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Silicon; Maximum Dark Current: 2 nA; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000004 s;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 2 nA; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Silicon; Maximum Response Time: .00000035 s;

PIN PHOTODIODE; Size: 2 mm; Maximum Operating Temperature: 80 Cel; Shape: ROUND; Peak Wavelength (nm): 1000; Infrared (IR) Range: YES;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 30 nA; Maximum Operating Temperature: 100 Cel; Maximum Reverse Voltage: 60 V; Semiconductor Material: GaAs;

PIN PHOTODIODE;

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 4 nA; JESD-609 Code: e0;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Maximum Response Time: .00000005 s; Configuration: SINGLE; Semiconductor Material: Silicon;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; No. of Functions: 1;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; Nominal Light Current: .0054 mA; Minimum Reverse Breakdown Voltage: 32 V; Configuration: SINGLE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 5 nA; Maximum Operating Temperature: 100 Cel; Nominal Light Current: .027 mA; Peak Wavelength (nm): 960;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000000003 s; Semiconductor Material: InGaAs;