Infineon Technologies - SFH234S

PIN PHOTODIODE; Nominal Light Current: .0036 mA; Configuration: SINGLE; No. of Functions: 1; Shape: ROUND; Peak Wavelength (nm): 880;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Peak Wavelength (nm): 420; Minimum Operating Temperature: -40 Cel; Additional Features: LOW NOISE;

AVALANCHE PHOTODIODE;

Photo Diodes; Nominal Light Current: .0023 mA; Additional Features: HIGH RELIABILITY, LOW NOISE; Peak Wavelength (nm): 850; Maximum Dark Current: .015 nA; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 50 V; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 50 nA; Semiconductor Material: Silicon;

PIN PHOTODIODE; Configuration: SINGLE; Additional Features: RESPONDS TO 600 TO 900 NANO METRE; Minimum Operating Temperature: -40 Cel; Minimum Reverse Breakdown Voltage: 100 V; No. of Functions: 1;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -30 Cel; Maximum Reverse Voltage: 32 V; Maximum Response Time: .00000012 s;

Vishay Intertechnology's BPW34S is a single PIN photodiode with a 3mm square shape and peak wavelength of 900nm. It operates b/w -40°C to 100°C, with a min reverse breakdown voltage of 60V. Ideal for applications requiring infrared detection, it has a nominal light current of 0.05mA and max dark current of 30nA.

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Configuration: COMPLEX; Shape: SQUARE; Size: 6 mm; Minimum Reverse Breakdown Voltage: 24.2 V;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 875; Minimum Reverse Breakdown Voltage: 40 V;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; No. of Functions: 1; Peak Wavelength (nm): 1000; Minimum Reverse Breakdown Voltage: 20 V; Configuration: SINGLE; Minimum Operating Temperature: -20 Cel;

Photo Diodes; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Dark Current: 3 nA; Minimum Operating Temperature: -20 Cel;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Reverse Voltage: 15 V; Configuration: SINGLE; Peak Wavelength (nm): 850; Nominal Light Current: .81 mA;

AVALANCHE PHOTODIODE; Maximum Dark Current: 720 nA; Shape: SQUARE; Peak Wavelength (nm): 420; Minimum Reverse Breakdown Voltage: 24.2 V; Configuration: COMPLEX;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000002 s; Maximum Dark Current: 100 nA;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Reverse Voltage: 45 V; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Germanium;

PIN PHOTODIODE; Maximum Dark Current: 30 nA; Peak Wavelength (nm): 870; Nominal Light Current: .04 mA; No. of Functions: 1; Shape: RECTANGULAR;