Infineon Technologies - FZ1200R45HL3BPSA1

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 540 W; Maximum Collector Current (IC): 75 A; Terminal Position: SINGLE;

BSM75GB120DN2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 3.2V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation of 625W and max operating temperature of 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Transistor Application: MOTOR CONTROL;

FGH40N65UFDTU_F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 80A, and Pmax of 290W. Ideal for power control applications, it operates up to 150°C with a VCE max of 650V.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 962 W; Maximum Collector Current (IC): 170 A; Terminal Position: SINGLE;

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Terminals: 7;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Nominal Turn Off Time (toff): 325 ns; Case Connection: COLLECTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Terminals: 3; Transistor Application: POWER CONTROL;

Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 88 A; Transistor Element Material: SILICON; Reference Standard: IEC-60747-1; UL RECOGNIZED;

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 675 A; Package Body Material: UNSPECIFIED; No. of Elements: 2;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 39 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Position: UPPER;

AUIRG4PH50S by Infineon Technologies is an N-CHANNEL IGBT with 1200V max. collector-emitter voltage, 57A max. collector current, and 200W max. power dissipation. It has a rectangular package shape and is suitable for applications requiring high power switching capabilities in industrial electronics and automotive systems.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 32 A; Additional Features: HIGH SPEED; Nominal Turn Off Time (toff): 315 ns;

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 35;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 560 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Nominal Turn Off Time (toff): 683 ns; Terminal Position: SINGLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 115 ns;