Infineon Technologies - FF450R12KE4EHOSA1

FF450R12KE4EHOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF450R12KE4EHOSA1
Description N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 520 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;
Datasheet FF450R12KE4EHOSA1 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 520 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 800 ns
No. of Terminals: 7
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 325 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Reference Standard: UL APPROVED
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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