Infineon Technologies - BPW34FS(E9087)

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 28 V; Semiconductor Material: GaAsP;

PIN PHOTODIODE; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

PIN PHOTODIODE; Peak Wavelength (nm): 880; Nominal Light Current: .04 mA; Maximum Dark Current: 30 nA; Configuration: SINGLE; No. of Functions: 1;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Germanium; Maximum Dark Current: 300 nA; Maximum Reverse Voltage: 40 V; Minimum Operating Temperature: -30 Cel;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 300 nA; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 60 Cel; Semiconductor Material: Germanium;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 45 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 200 nA;

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

AVALANCHE PHOTODIODE; Shape: SQUARE; Infrared (IR) Range: NO; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 420; No. of Functions: 1;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN OVER NICKEL; Maximum Reverse Voltage: 50 V; Size: 4.7 mm; Peak Wavelength (nm): 850;

PIN PHOTODIODE; Peak Wavelength (nm): 950; Infrared (IR) Range: YES; Maximum Dark Current: 30 nA; No. of Functions: 1; Size: 2.73 mm;

PIN PHOTODIODE; Maximum Dark Current: 5 nA; Configuration: SINGLE; Shape: ROUND; No. of Functions: 1; Size: 3 mm;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 20 V; Maximum Response Time: .000000001 s;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 85 Cel; Additional Features: LOW NOISE; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 49 nA;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Nominal Light Current: .008 mA; Minimum Reverse Breakdown Voltage: 20 V;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel;

TEMD5110X01 by Vishay Intertechnology is a single configuration photodiode with a peak wavelength of 940 nm. It operates at temperatures ranging from -40 to 100 °C and has a min reverse breakdown voltage of 60 V. This rectangular-shaped PIN photodiode is suitable for applications requiring infrared detection in surface mount installations.

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 5 nA; Semiconductor Material: InGaAs; Maximum Reverse Voltage: 20 V; Maximum Response Time: .000000001 s;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Additional Features: HIGH RELIABILITY, LOW NOISE; Maximum Reverse Voltage: 1 V; Infrared (IR) Range: YES;

AVALANCHE PHOTODIODE;