Infineon Technologies - BFR340FH6327XTSA1

  1. Home
  2. Infineon Technologies - BFR340FH6327XTSA1
BFR340FH6327XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFR340FH6327XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .02 A; No. of Elements: 1;
Datasheet BFR340FH6327XTSA1 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 14000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .02 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 6 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: LOW NOISE
Highest Frequency Band: S BAND
Maximum Collector-Base Capacitance: .4 pF
Reference Standard: AEC-Q101
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BFR360L3E6765XTMA1 by Infineon Technologies

BFR360L3E6765XTMA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: GOLD;
MMBTH81LT1 by Motorola

MMBTH81LT1

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF224RLRM by Onsemi

BF224RLRM

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 850 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;
BFS17 by Temic Semiconductors

BFS17

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2100 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;
NE85634-T1-A by Nec Electronics America

NE85634-T1-A

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
BF959ZL1 by Onsemi

BF959ZL1

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;
MPS5179RLRP by Onsemi

MPS5179RLRP

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
KST10MTF by Fairchild Semiconductor

KST10MTF

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Package Shape: RECTANGULAR;
SMMBTH10LT1 by Onsemi

SMMBTH10LT1

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .025 A; No. of Elements: 1;
MPSH17RLRE by Onsemi

MPSH17RLRE

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Transistor Element Material: SILICON; Maximum Collector-Base Capacitance: .9 pF;
MPSH10 by National Semiconductor

MPSH10

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
MCH6001-TL-E by Onsemi

MCH6001-TL-E

Onsemi

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .15 A;
BFR92AW by NXP Semiconductors

BFR92AW

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
BFT92W,115 by NXP Semiconductors

BFT92W,115

NXP Semiconductors

NXP Semiconductors' BFT92W,115 is a PNP RF BJT transistor with 3 terminals. It operates in L Band with fT of 4000 MHz and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 15V collector-emitter voltage.
UMX5NTR by ROHM

UMX5NTR

ROHM

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 3200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;
SS9018F by Onsemi

SS9018F

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;
2N4429 by STMicroelectronics

2N4429

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .425 A;
BF240RLRM by Onsemi

BF240RLRM

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: O-PBCY-T3;
MPS3563ZL1 by Onsemi

MPS3563ZL1

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 3;
CA3083M by Intersil

CA3083M

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;