Infineon Technologies - BFP183E7764HTSA1

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Terminal Finish: TIN LEAD; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3.5 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector-Base Capacitance: 1.7 pF;

NPN; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Transistor Element Material: SILICON;

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 14;

RF Small Signal Bipolar Transistors; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: WIRE; Package Body Material: METAL; Package Shape: ROUND;

BFU725F/N1,115 by NXP Semiconductors is an NPN RF Small Signal BJT with a max power dissipation of 0.136W and min DC current gain of 160. It features silicon germanium material and can handle a max collector current of 0.04A. Ideal for applications requiring high-frequency signal amplification in compact electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

BFP740E6327 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for amplifier applications in C band frequencies. It features Gull Wing terminals, 160 min hFE, and can operate b/w -55 to 150 °C with a max collector-emitter voltage of 4 V.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 320 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; No. of Terminals: 6;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .75 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Terminal Form: FLAT; Package Style (Meter): SMALL OUTLINE;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: THROUGH-HOLE;