Infineon Technologies - 2ED300C17SROHSBPSA1

  1. Home
  2. Infineon Technologies - 2ED300C17SROHSBPSA1
2ED300C17SROHSBPSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number 2ED300C17SROHSBPSA1
Description N-Channel; Transistor Element Material: SILICON; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Moisture Sensitivity Level (MSL): 1;
Datasheet 2ED300C17SROHSBPSA1 Datasheet
NAME DESCRIPTION
Transistor Element Material: SILICON
Maximum Operating Temperature: 85 Cel
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -25 Cel
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IXGH30N120B3D1 by IXYS Corporation

IXGH30N120B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 3.5 V;
SKM400GB12T4 by Semikron International

SKM400GB12T4

Semikron International

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 610 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-XUFM-X7;
AFGY100T65SPD by Onsemi

AFGY100T65SPD

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 882 W; Maximum Collector Current (IC): 120 A; Package Style (Meter): FLANGE MOUNT;
FGH60N60SMD by Fairchild Semiconductor

FGH60N60SMD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Case Connection: COLLECTOR;
STGP20V60DF by STMicroelectronics

STGP20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
IRGP35B60PDPBF by Infineon Technologies

IRGP35B60PDPBF

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 308 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
FGD5T120SH by Fairchild Semiconductor

FGD5T120SH

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;
FS400R07A1E3 by Infineon Technologies

FS400R07A1E3

Infineon Technologies

FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.
F4150R12KS4BOSA1 by Infineon Technologies

F4150R12KS4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 180 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
HGTG30N60A4D by Onsemi

HGTG30N60A4D

Onsemi

HGTG30N60A4D by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 75A. It has a nominal turn-off time of 238ns and a turn-on time of 35ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, suitable for flange mount installations at temperatures up to 150°C.
SKM150GB12T4 by Semikron International

SKM150GB12T4

Semikron International

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 230 A; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;
IXXX110N65B4H1 by Littelfuse

IXXX110N65B4H1

Littelfuse

Littelfuse IXXX110N65B4H1 is an N-CHANNEL IGBT with 650V VCEsat, 250A IC, and 880W power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns. Operates b/w -55°C to 175°C temperature range.
IXYP20N65C3D1 by Littelfuse

IXYP20N65C3D1

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; Case Connection: COLLECTOR;
IKW40N120CS6XKSA1 by Infineon Technologies

IKW40N120CS6XKSA1

Infineon Technologies

IKW40N120CS6XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 2.15V VCEsat. Ideal for POWER CONTROL applications due to its 500W power dissipation, -40 to 175°C operating temp range, and fast switching times of 65ns (ton) and 445ns (toff).
SGL160N60UFDTU by Fairchild Semiconductor

SGL160N60UFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 160 A; Terminal Position: SINGLE;
IXDN55N120D1 by IXYS Corporation

IXDN55N120D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
IXGH6N170 by Littelfuse

IXGH6N170

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 12 A; JESD-609 Code: e3;
HGTG10N120BND by Harris Semiconductor

HGTG10N120BND

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Nominal Turn Off Time (toff): 190 ns; Terminal Position: SINGLE;
HGTG18N120BND by Intersil

HGTG18N120BND

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 18 A; Maximum Gate-Emitter Voltage: 20 V;
STGP15M120F3 by STMicroelectronics

STGP15M120F3

STMicroelectronics

STGP15M120F3 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 1200V. It is used for power control applications, offering a nominal turn off time of 406ns and a max collector current of 30A.