Hittite Microwave - HMC5879LS7

WIDE BAND HIGH POWER; Construction: COMPONENT; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7000 MHz; Minimum Operating Temperature: -40 Cel;

Mini-circuits' PHA-13LN+ is a wideband low power RF amplifier with 20.2 dB gain, suitable for frequencies ranging from 1 MHz to 1000 MHz. It can handle up to 8 dBm CW input power and operates b/w -40°C to 105°C, making it ideal for various RF and microwave applications.

SGA-6286Z by Sirenza Microdevices is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, with a max input power of 18 dBm. Ideal for applications requiring surface mount components in the RF & Microwave field.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Maximum Input Power (CW): 10 dBm; No. of Functions: 1; Maximum Voltage Standing Wave Ratio: 1.58;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.

WIDE BAND MEDIUM POWER;

WIDE BAND LOW POWER;

WIDE BAND HIGH POWER; Minimum Operating Temperature: -55 Cel; Construction: COMPONENT; Minimum Operating Frequency: 5900 MHz; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 9; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -45 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Gain: 23 dB; No. of Functions: 1;

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.

Broadcom's MGA-62563-BLKG is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, matte tin terminals, and requires 3-5V power supply at 77 mA.

WIDE BAND MEDIUM POWER; Gain: 19.4 dB; Minimum Operating Frequency: 50 MHz; JESD-609 Code: e4; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 30 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: PHEMT; Gain: 23 dB;