Hittite Microwave - HMC478MP86TR

WIDE BAND MEDIUM POWER; No. of Functions: 1; Maximum Input Power (CW): 20 dBm; Power Supplies (V): 5; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 25; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Power Supplies (V): -1.8,24;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 5 dBm;

Qorvo's QPA1010D is a GAN RF amplifier with 30 dBm CW input power, 23.1 dB gain, and 50 ohm impedance. Ideal for wideband high-power applications from 7900 MHz to 11000 MHz, it features a VSWR of 3 and operates on -1.9V to 24V supplies.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP8,.19;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 20 dBm; Minimum Operating Frequency: 10 MHz; Characteristic Impedance: 50 ohm;

Broadcom's MGA-72543-BLK is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Technology: PHEMT; Minimum Operating Frequency: 25 MHz; Minimum Operating Temperature: -40 Cel;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 5000 MHz;

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 24 dBm; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC505LP4 is a RF amplifier with 24 terminals, operating from -40 to 85°C. It has a VSWR of 2, operates at frequencies b/w 6800-7400 MHz, and has a characteristic impedance of 50Ω. Ideal for narrowband low-power applications requiring surface mount technology.

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: CAN4,.3; Power Supplies (V): 15; Minimum Operating Frequency: 10 MHz;

WIDE BAND MEDIUM POWER;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; No. of Functions: 1;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Maximum Input Power (CW): 18 dBm;

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.