Hittite Microwave - HMC391LP4E

WIDE BAND HIGH POWER;

Analog Devices' HMC564LC4TR is a wide band low power RF amplifier with 14 dB gain, operating from 7-14 GHz. It has a max input power of 20 dBm and operates on a 3V supply, drawing up to 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Power Supplies (V): 5;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;

WIDE BAND LOW POWER; Technology: GAAS; Gain: 12 dB; Package Equivalence Code: DIE OR CHIP; No. of Functions: 1; Power Supplies (V): 5;

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.

WIDE BAND LOW POWER; Gain: 10 dB; Minimum Operating Frequency: 24000 MHz; Additional Features: LOW NOISE; Construction: COMPONENT; Characteristic Impedance: 50 ohm;

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

Analog Devices' HMC608LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and max current of 350mA, suitable for wideband medium-power applications in surface-mount setups.

WIDE BAND LOW POWER; Minimum Operating Frequency: 2000 MHz; Maximum Voltage Standing Wave Ratio: 1.5; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Input Power (CW): 20 dBm;

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 0 MHz; Characteristic Impedance: 50 ohm; Additional Features: HIGH RELIABILITY; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Input Power (CW): 15 dBm;

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; JESD-609 Code: e0; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm; Maximum Voltage Standing Wave Ratio: 1.2;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -45 Cel; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Frequency: 12000 MHz;