Fujitsu - FLC057WG

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: JUNCTION;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Terminals: 3; Terminal Position: SINGLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Minimum DS Breakdown Voltage: 30 V; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .04 A; Package Shape: RECTANGULAR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;

N-CHANNEL; Surface Mount: NO; Transistor Element Material: SILICON; No. of Elements: 1; JEDEC-95 Code: TO-72; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: JUNCTION; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Minimum DS Breakdown Voltage: 10 V; Minimum Power Gain (Gp): 21 dB;

Broadcom ATF-521P8-BLK is an N-channel FET with 15.5 dB power gain, ideal for amplifier applications in L Band frequencies. With a max drain current of 0.5 A and operating temperature up to 150°C, it offers high electron mobility technology in a small outline package.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain Current (ID): .03 A; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Maximum Drain Current (ID): .03 A; Transistor Element Material: SILICON;