Freescale Semiconductor - MMZ09332BT1

WIDE BAND HIGH POWER; Maximum Operating Frequency: 6000 MHz; Construction: MODULE; Gain: 19.5 dB; Minimum Operating Frequency: 2500 MHz; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Power Supplies (V): 5;

Qorvo's SBB5089ZSR is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 6000 MHz;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Voltage Standing Wave Ratio: 10;

HMC637ALP5E by Analog Devices is a wide band medium power RF amplifier with a gain of 12 dB. It has a max input power of 25 dBm and operates in temperatures ranging from -40 to 85°C. This component is suitable for applications requiring amplification in the frequency range of 0-6000 MHz.

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm; Terminal Finish: TUNGSTEN NICKEL GOLD; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 28000 MHz;

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);

WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Gain: 18 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 16 dBm;

The Qorvo TGA2567-SM is a wide band medium power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 22 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5.5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;

WIDE BAND HIGH POWER; Maximum Voltage Standing Wave Ratio: 10; Maximum Input Power (CW): 30 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 50 MHz; Construction: COMPONENT;

Analog Devices' HMC499 is a wide band medium power RF amplifier with 12 dB gain and 20 dBm CW input power. Operating from -55°C to 85°C, it covers frequencies from 21 GHz to 32 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.145CIR;

Qorvo's SPF5043Z is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.