Freescale Semiconductor - MMG3014NT1

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 15 dBm;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

WIDE BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 3400 MHz; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; Maximum Input Power (CW): 25 dBm; Gain: 26 dB;

WIDE BAND LOW POWER; Minimum Operating Temperature: 0 Cel; Gain: 7 dB; Construction: COAXIAL; Maximum Voltage Standing Wave Ratio: 2.1; Maximum Input Power (CW): 13 dBm;

NARROW BAND LOW POWER;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;

WIDE BAND MEDIUM POWER;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Maximum Supply Current: 38 mA; Power Supplies (V): 15; Maximum Operating Temperature: 50 Cel;

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; JESD-609 Code: e3; Maximum Input Power (CW): 15 dBm;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;