Asi Semiconductor - 2N3569

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 320 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .04 A; Highest Frequency Band: KU BAND;

NXP Semiconductors PBR951,215 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 8 GHz and has a max power dissipation of 0.365 W. Ideal for amplifier applications, it can handle a max collector-emitter voltage of 10V at an operating temp of 175°C.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .07 A;

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; JEDEC-95 Code: TO-39;

The NXP Semiconductors BFT92 is a PNP RF BJT transistor with 3 terminals, suitable for ultra-high frequency band applications. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. Ideal for amplifier circuits in small outline packages requiring high-frequency performance.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2000 MHz; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .07 A; JESD-609 Code: e6;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .025 A; JEDEC-95 Code: TO-92;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Emitter Voltage: 15 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Reference Standard: MIL-19500; Peak Reflow Temperature (C): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;