Analog Devices - ADL8142ACPZN-R7-CSL

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;

Broadcom's MGA-62563-BLK is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and operates on 3/5V supplies with a max current draw of 77mA.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 20 dBm; No. of Functions: 1;

Broadcom's MGA-62563-TR2G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3000 MHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3/5V supplies.

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Technology: PHEMT; Minimum Operating Frequency: 25 MHz; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 2.1; Gain: 9.2 dB; Maximum Operating Frequency: 6000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11.4 dB;

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Construction: COMPONENT;

WIDE BAND HIGH POWER; JESD-609 Code: e3; Maximum Input Power (CW): 25 dBm; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;

NARROW BAND LOW POWER; Minimum Operating Frequency: 4450 MHz; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3; Maximum Operating Frequency: 5000 MHz; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 65000 MHz; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 500 MHz; Minimum Operating Temperature: 0 Cel;

Analog Devices' HMC326MS8GETR is a wide band medium power RF amplifier with 18dB gain and 50 ohm impedance. It operates from 3-4.5GHz, handles up to 15dBm input power, and requires a 5V supply. Ideal for RF & microwave applications requiring high performance in a compact surface mount package.

WIDE BAND LOW POWER; Technology: GAAS; Gain: 12 dB; Package Equivalence Code: DIE OR CHIP; No. of Functions: 1; Power Supplies (V): 5;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 5;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 20000 MHz;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;