Ampleon Netherlands B V - CLF1G0035S-100

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; Maximum Drain Current (ID): 2.1 A; Maximum Drain Current (Abs) (ID): 2.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 4; Maximum Drain Current (Abs) (ID): 16 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 108 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 40 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Package Shape: RECTANGULAR; JESD-609 Code: e0;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Terminal Form: FLAT;

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 15 V;

CGH40045F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for S BAND applications. Featuring HIGH ELECTRON MOBILITY GaN technology, it operates in ENHANCEMENT MODE at up to 175°C. This FLANGE MOUNT transistor has a METAL-SEALED COFIRED CERAMIC package and GOLD OVER NICKEL terminal finish.

CGH40120F by Wolfspeed is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, ideal for AMPLIFIER applications. Featuring GALLIUM NITRIDE technology, it has a max temp of 150°C and can operate from -40 to 150°C.

NXP Semiconductors' MRFE6S9060NR1 is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a 66V DS breakdown voltage and can handle ultra-high frequency bands. The transistor, made of silicon MOSFET technology, has a max operating temperature of 225°C and features a flange mount package style.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: QUAD; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Form: FLAT; JESD-609 Code: e4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26.7 W; Package Shape: SQUARE; Terminal Position: QUAD;