Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392
| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
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Nexperia |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
100 |
150 Cel |
SILICON |
50 V |
DUAL |
R-PDSO-G6 |
BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
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Nexperia |
NOT SPECIFIED |
NOT SPECIFIED |
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Nexperia |
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Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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Nexperia |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
30 |
150 Cel |
SILICON |
50 V |
DUAL |
R-PDSO-G6 |
BUILT IN BIAS RESISTOR RATIO IS 1 |
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Nexperia |
NOT SPECIFIED |
NOT SPECIFIED |
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Nexperia |
1 |
30 |
260 |
AEC-Q101 |
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Nexperia |
NPN |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
100 |
SILICON |
50 V |
DUAL |
R-PDSO-G6 |
BUILT-IN BIAS RESISTOR RATIO IS 10 |
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Nexperia |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
.02 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
80 |
150 Cel |
SILICON |
50 V |
DUAL |
R-PDSO-G6 |
BUILT IN BIAS RESISTOR RATIO 1 |
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Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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Nexperia |
1 |
30 |
260 |
AEC-Q101 |
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Nexperia |
PNP |
SINGLE |
YES |
145 MHz |
1 A |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
SQUARE |
1 |
3 |
SMALL OUTLINE |
63 |
SILICON |
45 V |
TIN |
DUAL |
S-PDSO-N3 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
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Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
Nexperia |
NOT SPECIFIED |
NOT SPECIFIED |
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Nexperia |
NPN |
SINGLE |
YES |
100 MHz |
.2 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
.4 V |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
110 |
150 Cel |
1.5 pF |
SILICON |
45 V |
-65 Cel |
TIN |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
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|
Nexperia |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
100 |
150 Cel |
SILICON |
50 V |
DUAL |
R-PDSO-G6 |
BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
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Nexperia |
Tin (Sn) |
1 |
e3 |
30 |
260 |
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Nexperia |
PNP |
SINGLE |
YES |
100 MHz |
3.7 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
25 |
SILICON |
100 V |
200 ns |
325 ns |
SINGLE |
R-PSSO-F3 |
COLLECTOR |
TO-243AA |
IEC-60134 |
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Nexperia |
PNP |
SEPARATE, 2 ELEMENTS |
YES |
100 MHz |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
110 |
SILICON |
65 V |
DUAL |
R-PDSO-G6 |
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Nexperia |
PNP |
SINGLE WITH BUILT-IN RESISTOR |
YES |
180 MHz |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
100 |
SILICON |
50 V |
TIN |
DUAL |
R-PDSO-G3 |
1 |
BUILT IN BIAS RESISTANCE RATIO IS 21 |
TO-236AB |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
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|
Nexperia |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
230 MHz |
.3 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
.1 V |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
100 |
150 Cel |
2.5 pF |
SILICON |
50 V |
-65 Cel |
DUAL |
R-PDSO-G6 |
1 |
BUILT IN BIAS RESISTANCE RATIO IS 10 |
30 |
260 |
AEC-Q101; IEC-60134 |
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Nexperia |
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Nexperia |
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Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
|
Nexperia |
PNP |
SINGLE WITH BUILT-IN RESISTOR |
YES |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
80 |
150 Cel |
SILICON |
50 V |
TIN |
DUAL |
R-PDSO-G3 |
1 |
BUILT-IN BIAS RESISTOR RATIO IS 2.1 |
TO-236AB |
e3 |
30 |
260 |
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Nexperia |
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Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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|
|
Nexperia |
NPN |
SINGLE WITH BUILT-IN RESISTOR |
YES |
230 MHz |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
100 |
SILICON |
50 V |
TIN |
DUAL |
R-PDSO-N3 |
1 |
COLLECTOR |
BUILT IN BIAS RESISTANCE RATIO IS 21 |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
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|
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
|
Nexperia |
NPN |
SINGLE |
YES |
155 MHz |
1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
63 |
SILICON |
80 V |
-55 Cel |
TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
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Nexperia |
PNP |
SINGLE |
YES |
50 MHz |
.25 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
70 |
SILICON |
500 V |
DUAL |
R-PDSO-G4 |
COLLECTOR |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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|
|
Nexperia |
NOT SPECIFIED |
NOT SPECIFIED |
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|
|
Nexperia |
1 |
30 |
260 |
AEC-Q101 |
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|
|
Nexperia |
NPN |
SEPARATE, 2 ELEMENTS |
YES |
140 MHz |
2 A |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
SQUARE |
2 |
6 |
SMALL OUTLINE |
50 |
SILICON |
60 V |
TIN |
DUAL |
S-PDSO-N6 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
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|
Nexperia |
NOT SPECIFIED |
NOT SPECIFIED |
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|
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
Nexperia |
PNP |
SINGLE |
YES |
200 MHz |
.2 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
290 |
SILICON |
50 V |
DUAL |
R-PDSO-G3 |
TO-236AB |
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|
Nexperia |
150 Cel |
TIN |
1 |
e3 |
30 |
260 |
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|
Nexperia |
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|
Nexperia |
NOT SPECIFIED |
NOT SPECIFIED |
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|
Nexperia |
1 |
30 |
260 |
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|
Nexperia |
NPN |
SINGLE |
YES |
180 MHz |
1 A |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
SQUARE |
1 |
3 |
SMALL OUTLINE |
100 |
SILICON |
80 V |
TIN |
DUAL |
S-PDSO-N3 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
|
Nexperia |
PNP |
SINGLE |
YES |
200 MHz |
.2 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
210 |
SILICON |
50 V |
TIN |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
AEC-Q101 |
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Nexperia |
Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.
Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395