Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
22 dBm |
1.54 |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
6000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
18 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-55 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
40000 MHz |
|||||||||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
20 dBm |
10 |
COMPONENT |
28 |
LCC24,.3SQ,32 |
50 ohm |
150 Cel |
29.7 dB |
-40 Cel |
TIN |
e3 |
2400 MHz |
2500 MHz |
||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
400 MHz |
4000 MHz |
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|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
65 mA |
COMPONENT |
3.3 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
1 MHz |
6000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PHEMT |
1 |
25 dBm |
1.29 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
10 MHz |
9000 MHz |
||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
25 |
PLASTIC/EPOXY |
GAN |
1 |
30 dBm |
3 |
600 mA |
COMPONENT |
-1.8,24 |
LCC24,.18X.2,20 |
50 ohm |
21.1 dB |
7900 MHz |
11000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.2 dB |
-40 Cel |
MATTE TIN |
e3 |
50 MHz |
6000 MHz |
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|
Infineon Technologies |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
150 Cel |
13.6 dB |
-65 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
4.5 dB |
-40 Cel |
MATTE TIN |
e3 |
540 MHz |
|||||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2000 MHz |
18000 MHz |
|||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
24 dBm |
COMPONENT |
50 ohm |
105 Cel |
18.8 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
|||||||||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
17 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
LOW NOISE |
e4 |
10 MHz |
40000 MHz |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
105 Cel |
13.2 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
30 MHz |
6000 MHz |
||||||||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
250 mA |
3.6 |
SOLCC8,.12,20 |
RF/Microwave Amplifiers |
NICKEL PALLADIUM GOLD |
e4 |
||||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
19 dBm |
98 mA |
COMPONENT |
4.9 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.2 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
500 MHz |
||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
IEC-60134 |
1559 MHz |
1610 MHz |
||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.8 |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
4000 MHz |
|||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
23 dBm |
100 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
50 MHz |
4000 MHz |
||||||
|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
15 dBm |
COMPONENT |
6 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-55 Cel |
MATTE TIN |
e3 |
5900 MHz |
9500 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
124 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
105 Cel |
14.3 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
30 MHz |
6000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
40000 MHz |
|||||||||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 dBm |
160 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
18.5 dB |
MATTE TIN |
e3 |
40 MHz |
4000 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
105 mA |
COMPONENT |
3.5 |
LCC16,.16SQ,20 |
50 ohm |
85 Cel |
26 dB |
-40 Cel |
13750 MHz |
18000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
7000 MHz |
14000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
2000 MHz |
28000 MHz |
||||||||||||||||
|
Skyworks Solutions |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
8 |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
39.5 dB |
-40 Cel |
TIN |
e3 |
600 MHz |
1100 MHz |
||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
130 mA |
8 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
70 mA |
COMPONENT |
3 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
22 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
|||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
5 |
MODULE |
50 ohm |
19.5 dB |
2500 MHz |
6000 MHz |
|||||||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
33 dBm |
85 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
21 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
600 MHz |
4200 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
5000 MHz |
10000 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-25 Cel |
Tin (Sn) |
e3 |
50 MHz |
1300 MHz |
|||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
18.5 mA |
2.5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
2000 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
88 mA |
3 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
5000 MHz |
20000 MHz |
|||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
22 |
PHEMT |
1 |
50 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
85 Cel |
19.5 dB |
-55 Cel |
71000 MHz |
86000 MHz |
|||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
2 |
48 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
6.9 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
|||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
10 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
50 MHz |
1300 MHz |
|||||||
|
Qorvo |
WIDE BAND HIGH POWER |
33 dBm |
10 |
COMPONENT |
50 ohm |
19 dB |
30 MHz |
2500 MHz |
||||||||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
12 dBm |
5 |
COMPONENT |
3.6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
31 dB |
-40 Cel |
IT CAN ALSO OPERATE AT 100 TO 1000 MHZ |
433 MHz |
470 MHz |
|||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
5 |
700 mA |
COMPONENT |
7 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
LOW NOISE |
150 MHz |
960 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
52 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.6 dB |
-40 Cel |
MATTE TIN |
e3 |
1 MHz |
2700 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.