Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
21.1 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
Analog Devices |
NARROW BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
19.7 dB |
-40 Cel |
MATTE TIN |
e3 |
20 MHz |
500 MHz |
|||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
13 dB |
10 MHz |
1000 MHz |
||||||||||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
24 dBm |
COMPONENT |
50 ohm |
85 Cel |
25 dB |
-40 Cel |
MATTE TIN |
e3 |
5500 MHz |
8500 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
160 mA |
COMPONENT |
4 |
LCC8(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
Nickel/Gold (Ni/Au) |
LOW NOISE |
e4 |
7000 MHz |
21000 MHz |
||||||||
|
Skyworks Solutions |
||||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
18 dBm |
COMPONENT |
8 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-55 Cel |
LOW NOISE |
0 MHz |
20000 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-55 Cel |
10 MHz |
10000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
20000 MHz |
|||||||||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
15 mA |
COMPONENT |
1/2.85 |
MODULE,12LEAD,.13 |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
CMOS COMPATIBLE |
0 MHz |
1575 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
3900 MHz |
4450 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
15 dBm |
220 mA |
COMPONENT |
6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
GOLD NICKEL |
e4 |
2000 MHz |
4000 MHz |
||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC10,.08SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
10.5 dB |
Tin (Sn) |
e3 |
50 MHz |
7000 MHz |
|||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
6000 MHz |
||||||||||
|
Skyworks Solutions |
NARROW BAND MEDIUM POWER |
|||||||||||||||||||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
GAAS |
1 |
20 dBm |
120 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
100 Cel |
16.3 dB |
-55 Cel |
ULTRA LOW NOISE |
2000 MHz |
3000 MHz |
|||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
|||||||||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
18 dBm |
390 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
85 Cel |
24.7 dB |
-40 Cel |
MATTE TIN |
e3 |
1800 MHz |
2700 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
86 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
50 MHz |
6000 MHz |
||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
20.1 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
28 dBm |
960 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
MATTE TIN |
e3 |
400 MHz |
2400 MHz |
||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
13 dBm |
3 |
COMPONENT |
12.5 |
FLNG,1.6"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
33 dB |
-30 Cel |
154 MHz |
162 MHz |
|||||||||||
|
Skyworks Solutions |
NARROW BAND HIGH POWER |
|||||||||||||||||||||||||
Toshiba |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
1 |
15 dBm |
COMPONENT |
10,-5 |
FLNG,.53"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
9500 MHz |
12000 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
250 mA |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
MATTE TIN |
e3 |
3000 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
22 dBm |
COMPONENT |
8 |
LCC24,.2SQ,25 |
50 ohm |
85 Cel |
29.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5500 MHz |
8500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
7500 MHz |
26500 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
125 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
13.7 dB |
Matte Tin (Sn) |
LOW NOISE |
e3 |
40 MHz |
3000 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
50 mA |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
14.4 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
||||||||||
Motorola |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
23 dBm |
30 |
COMPONENT |
13 |
MOT CASE 301H-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
890 MHz |
915 MHz |
||||||||||||||
Motorola |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
19 dBm |
2 |
COMPONENT |
12.5 |
MOT CASE 301AB-01 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26.5 dB |
-5 Cel |
925 MHz |
960 MHz |
||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
22 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
440 mA |
COMPONENT |
5 |
LCC22(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.7 dB |
-40 Cel |
700 MHz |
1000 MHz |
||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
1.8/2.85 |
SOLCC6,.04,16 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
28 dBm |
50 mA |
COMPONENT |
4 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
22.3 dB |
Matte Tin (Sn) |
e3 |
800 MHz |
3000 MHz |
||||||||
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
||||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
415 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
23.5 dB |
TIN |
e3 |
1500 MHz |
2700 MHz |
|||||||||
|
Skyworks Solutions |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
450 MHz |
6000 MHz |
|||||||||||||||
|
Skyworks Solutions |
WIDE BAND MEDIUM POWER |
COMPONENT |
85 Cel |
15 dB |
-40 Cel |
LOW NOISE |
400 MHz |
2700 MHz |
||||||||||||||||||
|
Skyworks Solutions |
NARROW BAND HIGH POWER |
|||||||||||||||||||||||||
|
Skyworks Solutions |
NARROW BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
16.1 dB |
-40 Cel |
1200 MHz |
3000 MHz |
|||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
20 dBm |
2 |
COMPONENT |
50 ohm |
20 dB |
0 MHz |
3500 MHz |
||||||||||||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.