Laser Diodes
| Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | No. of Functions | Maximum Forward Current | Peak Wavelength (nm) | Packing Method | Maximum Response Time | Sub-Category | Semiconductor Material | Maximum Operating Temperature | Shape | Maximum Threshold Current | Minimum Operating Temperature | Nominal Output Power | Additional Features | Spectral Bandwidth | JESD-609 Code | Maximum Forward Voltage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.045 A |
670 |
Laser Diodes |
60 Cel |
-10 Cel |
2.6 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.14 A |
785 |
Laser Diodes |
60 Cel |
-10 Cel |
2.8 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
790 |
Laser Diodes |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
640 |
Laser Diodes |
AlGaInP |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
830 |
Laser Diodes |
65 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
815 |
Laser Diodes |
AlGaInP |
60 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.06 A |
635 |
Laser Diodes |
40 Cel |
-10 Cel |
2.5 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.12 A |
658 |
Laser Diodes |
75 Cel |
-10 Cel |
3 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
850 |
Laser Diodes |
GaAlAs |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
800 |
Laser Diodes |
GaAlAs |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
790 |
Laser Diodes |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
780 |
Laser Diodes |
65 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
830 |
Laser Diodes |
GaAlAs |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
790 |
Laser Diodes |
GaAlAs |
e0 |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.06 A |
790 |
Laser Diodes |
60 Cel |
-10 Cel |
2.3 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
805 |
Laser Diodes |
AlGaInP |
60 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
640 |
Laser Diodes |
AlGaInP |
40 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.05 A |
650 |
Laser Diodes |
70 Cel |
-10 Cel |
2.6 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.11 A |
658 |
Laser Diodes |
70 Cel |
-10 Cel |
3 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
830 |
Laser Diodes |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
790 |
Laser Diodes |
GaAlAs |
e0 |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.14 A |
783 |
Laser Diodes |
60 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
685 |
Laser Diodes |
AlGaInP |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
830 |
Laser Diodes |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
800 |
Laser Diodes |
GaAlAs |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.05 A |
635 |
Laser Diodes |
50 Cel |
-10 Cel |
2.5 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
830 |
Laser Diodes |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
830 |
Laser Diodes |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
816 |
Laser Diodes |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
875 |
Laser Diodes |
GaAlAs |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
680 |
Laser Diodes |
AlGaInP |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.045 A |
670 |
Laser Diodes |
60 Cel |
-10 Cel |
2.6 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.08 A |
635 |
Laser Diodes |
50 Cel |
-10 Cel |
2.5 V |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
810 |
Laser Diodes |
GaAlAs |
50 Cel |
-10 Cel |
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|
Onsemi |
LASER DIODE |
THROUGH HOLE MOUNT |
.13 A |
783 |
Laser Diodes |
60 Cel |
-10 Cel |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.15 A |
875 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
4.5 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.15 A |
850 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
4.5 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.15 A |
875 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
4.5 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.15 A |
875 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
4.5 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.15 A |
850 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
4.5 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.15 A |
820 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
4.5 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.07 A |
790 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
2 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.15 A |
820 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
4.5 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.07 A |
790 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
2 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.07 A |
790 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
2 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.07 A |
790 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
2 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.07 A |
790 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
2 m |
2.5 V |
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|
NXP Semiconductors |
LASER DIODE |
THROUGH HOLE MOUNT |
.15 A |
820 |
.0000000005 s |
Laser Diodes |
AlGaAs |
60 Cel |
-10 Cel |
4.5 m |
2.5 V |
Laser diodes are electronic devices that emit a coherent and monochromatic beam of light through the process of stimulated emission. Laser diodes are commonly used in a wide range of applications, including telecommunications, medical equipment, and industrial manufacturing.
Laser diodes are similar in structure to regular diodes but are designed to emit light instead of electrical current. They consist of a semiconductor material, typically gallium arsenide, which is doped with impurities to create a p-n junction. When a voltage is applied across the p-n junction, it causes electrons to move from the n-type region to the p-type region, releasing energy in the form of photons.
Laser diodes are characterized by their high efficiency, small size, and ability to produce a narrow and intense beam of light. They are used in a wide range of applications, including fiber-optic communications, optical storage devices, and laser printers.