FRAMs

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY15V102QN-50SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	7 mA	262144 words	1.8		8	SMALL OUTLINE	SOP8,.3		11	1.27 mm	125 Cel	256KX8	256K	1.71 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.89 V	2.03 mm	10000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	2097152 bit	1.71 V	2kv ESD available				.00034 Amp	5.28 mm
CY15B101N-ZS60XET	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm			1048576 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE	e4			.0007 Amp	18.415 mm	60 ns
CY15B104QI-20LPXCT	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.5 mA	524288 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	70 Cel	512KX8	512K	1.8 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available	e4		260	.00007 Amp	3.28 mm
CY15B104QSN-108LPXIT	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	21 mA	524288 words	3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	100000000000000 Write/Erase Cycles	108 MHz	3.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available	e4		260	.00035 Amp	3.28 mm
CY15V108QI-20LPXC	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	1048576 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.2,25		10	.65 mm	70 Cel	1MX8	1M	1.8 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available	e4		260	.00012 Amp	3.28 mm
CY15V108QN-20LPXCT	Infineon Technologies	FRAM	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,25		10	.65 mm	70 Cel	1MX8	1M	1.71 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.71 V	2kv ESD available	e4		260	.00011 Amp	3.28 mm
CY15V104QSN-108SXI	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	21 mA	524288 words	1.8		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.71 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.89 V	2.03 mm	100000000000000 Write/Erase Cycles	108 MHz	5.23 mm		SPI	4194304 bit	1.71 V	2kv ESD available			260	.000209 Amp	5.28 mm
CY15B004Q-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	512X8	512	3 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	16 MHz	3.8985 mm		SPI	4096 bit	3 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00002 Amp	4.889 mm
CY15V108QN-20LPXC	Infineon Technologies	FRAM	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,25		10	.65 mm	70 Cel	1MX8	1M	1.71 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.71 V	2kv ESD available	e4		260	.00011 Amp	3.28 mm
FM28V202-BG	Infineon Technologies	FRAM	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		10	.75 mm	85 Cel	128KX16	128K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		6 mm			2097152 bit	2 V		e1			.00025 Amp	8 mm	105 ns
CY15B016J-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.34 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	2KX8	2K	3 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm		I2C	16384 bit	3 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00002 Amp	4.889 mm
CY15V116QN-40BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3.6 mA	2097152 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel	2MX8	2M	1.71 V	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm		SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE	e1		260	.0002525 Amp	8 mm
FM25640C-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	4.5 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm		SPI	65536 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.9 mm
CY15B104QN-50LPXIT	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.7 mA	524288 words	3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	85 Cel	512KX8	512K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	50 MHz	3.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available	e4		260	.00007 Amp	3.28 mm
FM25040B-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	512X8	512	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	20 MHz	3.8985 mm	Not Qualified	SPI	4096 bit	4.5 V	2kv ESD available		30	260	.00001 Amp	4.889 mm
FM24C16C-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	2048 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	2KX8	2K	4.5 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	16384 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.9 mm
CY15B116QN-40BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	4.3 mA	2097152 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel	2MX8	2M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm		SPI	16777216 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE			260	.0002535 Amp	8 mm
CY15B128J-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	125 Cel	16KX8	16K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	131072 bit	2 V	2kv ESD available			260	.00015 Amp	4.889 mm
CY15V104QN-50SXI	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.7 mA	524288 words	1.8		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.89 V	2.03 mm	1000000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	4194304 bit	1.71 V	2kv ESD available			260	.000065 Amp	5.28 mm
CY15E016Q-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3.2 mA	2048 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	2KX8	2K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	16 MHz	3.8985 mm		SPI	16384 bit	4.5 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00003 Amp	4.889 mm
CY15V108QN-20LPXI	Infineon Technologies	FRAM	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,25		10	.65 mm	85 Cel	1MX8	1M	1.71 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.71 V	2kv ESD available	e4		260	.00011 Amp	3.28 mm
FM28V102A-TG	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD SILVER	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles		10.16 mm			1048576 bit	2 V	2kv ESD available	e4			.00025 Amp	18.415 mm	105 ns
FM25V40-DCG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	70 Cel	512KX8	512K	2.7 V	0 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	4194304 bit	2.7 V	also operates with 2minv supply @ 25 mhz				.00024 Amp	6 mm
FM25W64-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000000000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	SPI	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.9 mm
CY15V104QN-50LPXIT	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.7 mA	524288 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	50 MHz	3.23 mm		SPI	4194304 bit	1.71 V	2kv ESD available	e4		260	.000065 Amp	3.28 mm
CY15V102QN-50PZXI	Infineon Technologies	FRAM	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	1.8		8	IN-LINE	DIP8,.3		10	2.54 mm	85 Cel	256KX8	256K	1.71 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	1	1.89 V	4.572 mm	1000000000000000 Write/Erase Cycles	50 MHz	7.62 mm		SPI	2097152 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.000065 Amp	9.398 mm
CY15B101N-ZS60XE	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm			1048576 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE	e4			.0007 Amp	18.415 mm	60 ns
FM25V20-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	2097152 bit	2.7 V	DATA RETENTIALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY; 4KV ESD AVAILABLE				.00025 Amp	5.28 mm
CY15B102QM-50SWXI	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	1000000000000000 Write/Erase Cycles	50 MHz	3.8985 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00007 Amp	4.889 mm
CY15B101N-ZS60XMT	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	64KX16	64K	2 V	-55 Cel		DUAL		R-PDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm			1048576 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.0007 Amp	18.415 mm	60 ns
FM25V20-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTIALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY; 4KV ESD AVAILABLE				.00025 Amp	6 mm
FM25V20-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTIALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY; 4KV ESD AVAILABLE				.00025 Amp	6 mm
CY15E064J-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.45 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	8KX8	8K	4.5 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm		I2C	65536 bit	4.5 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.00004 Amp	4.889 mm
CY15B101N-ZS60XM	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	64KX16	64K	2 V	-55 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm			1048576 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.0007 Amp	18.415 mm	60 ns
CY15B102N-ZS60XMT	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	128KX16	128K	2 V	-55 Cel		DUAL	SOFTWARE	R-XDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm			2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.0007 Amp	18.415 mm	60 ns
CY15V116QN-40BKXQTR	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	7 mA	2097152 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	105 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm		SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.0008 Amp	8 mm
CY15V102QN-50PZXIT	Infineon Technologies	FRAM	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	1.8		8	IN-LINE	DIP8,.3		10	2.54 mm	85 Cel	256KX8	256K	1.71 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		1.89 V	4.572 mm	1000000000000000 Write/Erase Cycles	50 MHz	7.62 mm		SPI	2097152 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.000065 Amp	9.398 mm
CY15B102QN-50PZXIT	Infineon Technologies	FRAM	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	3.3		8	IN-LINE	DIP8,.3		10	2.54 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	4.572 mm	1000000000000000 Write/Erase Cycles	50 MHz	7.62 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00007 Amp	9.398 mm
CY15V102QN-50SXIT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	1.8		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	1.71 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.89 V	2.03 mm	1000000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	2097152 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.000065 Amp	5.28 mm
CY15V116QN-40BKXQ	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	7 mA	2097152 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	105 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm		SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.0008 Amp	8 mm
CY15B204QI-20LPXIT	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	524288 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	4194304 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00012 Amp	3.28 mm
CY15B204QI-20LPXI	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	524288 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	4194304 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00012 Amp	3.28 mm
CY15B116QN-40BKXAT	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	4.3 mA	2097152 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel	2MX8	2M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm		SPI	16777216 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.0002535 Amp	8 mm
CY15V116QN-40BKXA	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	3.6 mA	2097152 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm		SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.0002525 Amp	8 mm
CY15V116QN-40BKXAT	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	3.6 mA	2097152 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm		SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.0002525 Amp	8 mm
CY15V108QN-50BKXIT	Infineon Technologies	FRAM	24	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	4.5 mA	1048576 words	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA24,5X5,40		10	1 mm	85 Cel	1MX8	1M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	50 MHz	6 mm		SPI	8388608 bit	1.71 V					.000135 Amp	8 mm
CY15V108QSN-108BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	27.5 mA	1048576 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel	1MX8	1M		-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	100000000000000 Write/Erase Cycles	108 MHz	6 mm		SPI	8388608 bit	1.71 V					.000435 Amp	8 mm
CY15B108QSN-108BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	27.5 mA	1048576 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel	1MX8	1M		-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	108 MHz	6 mm		SPI	8388608 bit	1.8 V					.000435 Amp	8 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.