STMicroelectronics Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M25P05-AVMN6T

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

65536 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

1.27 mm

85 Cel

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

SPI

524288 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

e4

NOR TYPE

.000005 Amp

4.9 mm

2.7

M25P05-AVMN6TP

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

65536 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

1.27 mm

85 Cel

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

SPI

524288 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

e4

NOR TYPE

.000005 Amp

4.9 mm

2.7

M25PE16-VMW6G

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

2097152 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.3

Flash Memories

20

1.27 mm

85 Cel

2MX8

2M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

2.5 mm

100000 Write/Erase Cycles

50 MHz

5.99 mm

Not Qualified

15 ms

SPI

16777216 bit

2.7 V

e4

NOR TYPE

.00001 Amp

5.3 mm

2.7

M28F512-12C6

STMicroelectronics

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

CHIP CARRIER

LDCC32,.5X.6

Flash Memories

1.27 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

YES

MATTE TIN

QUAD

R-PQCC-J32

5.5 V

3.56 mm

10000 Write/Erase Cycles

11.455 mm

Not Qualified

524288 bit

4.5 V

BULK ERASE

e3

NOR TYPE

.0001 Amp

13.995 mm

12 ns

12

NO

NAND02GW3B2DN6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

128K

30 mA

268435456 words

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

256MX8

256M

-40 Cel

2K

YES

YES

DUAL

R-PDSO-G48

Not Qualified

2147483648 bit

2K

.00005 Amp

20 ns

NO

M28W640HCB70N6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

4194304 words

3

NO

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

MATTE TIN/TIN BISMUTH

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

BOTTOM BOOT BLOCK

4

e3/e6

40

260

NOR TYPE

.000005 Amp

18.4 mm

YES

70 ns

3

NO

M29W640FT70N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

4/8

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M25PE80-VMW6TG

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.3

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

2.5 mm

100000 Write/Erase Cycles

50 MHz

5.59 mm

Not Qualified

23 ms

SPI

8388608 bit

2.7 V

e4

40

260

NOR TYPE

.00001 Amp

5.3 mm

2.7

M28W320FCB70N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

2097152 words

3

NO

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN/TIN BISMUTH

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

e3/e6

40

260

NOR TYPE

.000005 Amp

18.4 mm

YES

70 ns

3

NO

M58BW016FB7T3F

STMicroelectronics

FLASH

AUTOMOTIVE

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

2K,16K

40 mA

524288 words

3

NO

2.5/3.3,3/3.3

32

FLATPACK

QFP80,.7X.9,32

Flash Memories

.8 mm

125 Cel

512KX32

512K

-40 Cel

8,31

YES

QUAD

R-PQFP-G80

3.6 V

3.4 mm

14 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

20 mm

YES

70 ns

3

NO

M25P20-VMP6G

STMicroelectronics

FLASH

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

262144 words

3

3/3.3

8

SMALL OUTLINE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

50 MHz

5 mm

Not Qualified

SPI

2097152 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

6 mm

2.7

M25PE10-VMN6P

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

131072 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

33 MHz

3.9 mm

Not Qualified

25 ms

SPI

1048576 bit

2.7 V

e4

NOR TYPE

.00001 Amp

4.9 mm

2.7

M25PE10-VMN6TP

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

131072 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

33 MHz

3.9 mm

Not Qualified

25 ms

SPI

1048576 bit

2.7 V

e4

NOR TYPE

.00001 Amp

4.9 mm

2.7

M25PE20-VMN6TP

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

262144 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

256KX8

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

33 MHz

3.9 mm

Not Qualified

25 ms

SPI

2097152 bit

2.7 V

e4

NOR TYPE

.00001 Amp

4.9 mm

2.7

M28W320FCT70ZB6E

STMicroelectronics

FLASH

INDUSTRIAL

47

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

2097152 words

3

NO

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA47,6X8,30

Flash Memories

.75 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN SILVER COPPER

BOTTOM

R-PBGA-B47

3.6 V

1.2 mm

6.37 mm

Not Qualified

TOP

33554432 bit

2.7 V

e1

NOR TYPE

.000005 Amp

6.39 mm

YES

70 ns

3

NO

M29W160FT70N3F

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

10 mA

1048576 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

NAND01GW3B2BN6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

20 mA

134217728 words

3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

128MX8

128M

-40 Cel

1K

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

1073741824 bit

2.7 V

2K

e3/e6

NOT SPECIFIED

260

.00005 Amp

18.4 mm

25000 ns

3

NO

M25P20-VMN6

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

262144 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

256KX8

256K

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

SPI

2097152 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

e0

NOR TYPE

.000005 Amp

4.9 mm

2.7

M25P80VMP6TG

STMicroelectronics

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-XDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

75 MHz

5 mm

Not Qualified

15 ms

SPI

8388608 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

2.7

M25PE20-VMN6P

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

262144 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

256KX8

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

33 MHz

3.9 mm

Not Qualified

25 ms

SPI

2097152 bit

2.7 V

e4

NOR TYPE

.00001 Amp

4.9 mm

2.7

M25PE80-VMN6TP

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

23 ms

SPI

8388608 bit

2.7 V

e4

40

260

NOR TYPE

.00001 Amp

4.9 mm

2.7

M28W320FCB70ZB6E

STMicroelectronics

FLASH

INDUSTRIAL

47

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

2097152 words

3

NO

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA47,6X8,30

Flash Memories

.75 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN SILVER COPPER

BOTTOM

R-PBGA-B47

3.6 V

1.2 mm

6.37 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

e1

NOR TYPE

.000005 Amp

6.39 mm

YES

70 ns

3

NO

M29DW128G60ZA6E

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

32K,128K

15 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

8,62

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

134217728 bit

8

NOR TYPE

.0001 Amp

YES

60 ns

YES

M29F002BT70K6E

STMicroelectronics

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

Flash Memories

1.27 mm

85 Cel

256KX8

256K

-40 Cel

1,2,1,3

YES

TIN

QUAD

R-PQCC-J32

5.5 V

3.56 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

TOP

2097152 bit

4.5 V

TOP BOOT BLOCK

e3

NOR TYPE

.0001 Amp

13.97 mm

70 ns

5

YES

M29W128FL70N6E

STMicroelectronics

FLASH

INDUSTRIAL

56

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

20 mA

8388608 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

8MX16

8M

-40 Cel

256

YES

MATTE TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

134217728 bit

2.7 V

100,000 PROGRAM/ERASE CYCLES

8/16

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W160FT70N3E

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

10 mA

1048576 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W320EB70N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W320ET70N6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

33554432 bit

2.7 V

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W400BB90N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

90 ns

2.7

YES

M29W400DT55N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

55 ns

3

YES

M29W640GH70NB6E

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

10 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

128

YES

MATTE TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

67108864 bit

2.7 V

4/8

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W800DT70N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M45PE80-VMN6TP

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

33 MHz

3.9 mm

Not Qualified

25 ms

SPI

8388608 bit

2.7 V

e4

NOR TYPE

.00001 Amp

4.9 mm

2.7

M45PE80-VMP6G

STMicroelectronics

FLASH

INDUSTRIAL

8

VSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-XDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

33 MHz

5 mm

Not Qualified

25 ms

SPI

8388608 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

2.7

M45PE80-VMW6G

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.3

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

2.03 mm

100000 Write/Erase Cycles

33 MHz

5.25 mm

Not Qualified

25 ms

SPI

8388608 bit

2.7 V

e4

NOR TYPE

.00001 Amp

5.3 mm

2.7

NAND02GW3B2CN6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

20 mA

268435456 words

3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

256MX8

256M

-40 Cel

2K

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2147483648 bit

2.7 V

2K

e3/e6

NOT SPECIFIED

260

.00005 Amp

18.4 mm

25000 ns

3

NO

NAND128W3A2BN6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

16777216 words

3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

16MX8

16M

-40 Cel

1K

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

134217728 bit

2.7 V

512

e3/e6

NOT SPECIFIED

260

SLC NAND TYPE

.00005 Amp

18.4 mm

12000 ns

3

NO

M28W231-120N6

STMicroelectronics

FLASH

INDUSTRIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

TOP

2097152 bit

2.7 V

NOR TYPE

18.4 mm

120 ns

12

M50FW080N1TG

STMicroelectronics

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

64K

60 mA

1048576 words

3.3

NO

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

1MX8

1M

0 Cel

16

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

8388608 bit

3 V

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

11 ns

3

NO

M28W640ECB90ZB1S

STMicroelectronics

FLASH

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

70 Cel

4MX16

4M

0 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6.39 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

BOTTOM BOOT BLOCK

NOR TYPE

10.5 mm

90 ns

3

M29F002B-120N1TR

STMicroelectronics

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

20

.5 mm

70 Cel

256KX8

256K

0 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

120 ns

5

YES

M28W320FSB90ZA6T

STMicroelectronics

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

20 mA

2097152 words

NO

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

Tin/Lead (Sn/Pb)

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

33554432 bit

e0

NOR TYPE

.000005 Amp

YES

90 ns

NO

M28W640CB90ZB6

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

4194304 words

3

NO

3/3.3,3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Flash Memories

.75 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6.39 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

BOTTOM BOOT BLOCK

e1

NOR TYPE

.000005 Amp

10.5 mm

YES

90 ns

3

NO

M28F210-70N1TR

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

256KX8

256K

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

TOP

2097152 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK

NOR TYPE

18.4 mm

70 ns

12

M28F841-150M6R

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G44

5.5 V

2.62 mm

13.3 mm

Not Qualified

8388608 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; SECTOR ERASE

NOR TYPE

28.2 mm

150 ns

12

M28F410-70N6

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

262144 words

5

NO

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G56

Not Qualified

TOP

4194304 bit

e0

NOR TYPE

.0001 Amp

70 ns

NO

M28F201-200P6

STMicroelectronics

FLASH

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

5

NO

5

8

IN-LINE

DIP32,.6

Flash Memories

2.54 mm

85 Cel

256KX8

256K

-40 Cel

YES

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

e0

NOR TYPE

.0001 Amp

41.91 mm

200 ns

12

NO

M29W400T-120M5

STMicroelectronics

FLASH

OTHER

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

3-STATE

256KX16

256K

-20 Cel

1,2,1,7

YES

Matte Tin (Sn)

YES

DUAL

R-PDSO-G44

3.6 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

e3

NOR TYPE

.00005 Amp

28.2 mm

120 ns

2.7

YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.