Onsemi EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT93C76XI-1.8REVA

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

16

SMALL OUTLINE

8

1.27 mm

85 Cel

512X16

512

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

5.5 V

2.03 mm

1 MHz

5.25 mm

Not Qualified

MICROWIRE

8192 bit

1.8 V

e3

5.3 mm

CAT93C57RD4A-REVE

Onsemi

EEPROM

INDUSTRIAL

8

VSON

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

131072 words

3

16

SMALL OUTLINE, VERY THIN PROFILE

8

.65 mm

105 Cel

128KX16

128K

-40 Cel

TIN LEAD

DUAL

S-XDSO-N8

1

6 V

.75 mm

.5 MHz

3 mm

Not Qualified

MICROWIRE

2097152 bit

2.5 V

e0

3 mm

N24C64UVTG

Onsemi

EEPROM

AUTOMOTIVE

8

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

65536 words

2.5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

.5 mm

125 Cel

64KX1

64K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

1

5.5 V

.9 mm

1 MHz

2 mm

4 ms

I2C

65536 bit

1.8 V

e3

30

260

2.3 mm

CAT93C56ZD4A-T3REVE

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

8

.65 mm

105 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

S-XDSO-N8

5.5 V

.8 mm

.5 MHz

3 mm

Not Qualified

MICROWIRE

2048 bit

2.5 V

e3

3 mm

CAT93C86WE-T3C

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

1024 words

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

125 Cel

1KX16

1K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

MICROWIRE

16384 bit

.00001 Amp

CAT93C66YI-E

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

5

3/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

8

EEPROMs

100

.65 mm

85 Cel

256X16

256

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

MICROWIRE

4096 bit

4.5 V

IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN

e3

.00001 Amp

4.4 mm

CAT150161LWI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16384 words

5

3/5

1

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

16KX1

16K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

10 MHz

3.9 mm

Not Qualified

5 ms

SPI

16384 bit

2.5 V

e4

.00002 Amp

4.9 mm

CAT93C57YE-GT2

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

8

EEPROMs

100

.635 mm

125 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

1000000 Write/Erase Cycles

Not Qualified

MICROWIRE

2048 bit

e3

.00001 Amp

CAT93C86PA-REVC

Onsemi

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

1024 words

5

16

IN-LINE

8

2.54 mm

105 Cel

1KX16

1K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T8

6 V

4.57 mm

1 MHz

7.62 mm

Not Qualified

MICROWIRE

16384 bit

2.5 V

e0

9.36 mm

CAT93C86VA-REVC

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1024 words

5

16

SMALL OUTLINE

8

1.27 mm

105 Cel

1KX16

1K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

6 V

1.75 mm

1 MHz

3.9 mm

Not Qualified

MICROWIRE

16384 bit

2.5 V

e3

4.9 mm

CAT93C57XA-1.8-E

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

2/5

16

SMALL OUTLINE

SOP8,.3

8

EEPROMs

100

1.27 mm

105 Cel

128X16

128

-40 Cel

DUAL

SOFTWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

MICROWIRE

2048 bit

.00001 Amp

CAT93C66YI-T3E

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

5

3/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

8

EEPROMs

100

.65 mm

85 Cel

256X16

256

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

MICROWIRE

4096 bit

4.5 V

IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN

e3

.00001 Amp

4.4 mm

CAT93C56XE-GT2

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

3/5

16

SMALL OUTLINE

SOP8,.3

8

EEPROMs

100

1.27 mm

125 Cel

128X16

128

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

SOFTWARE

R-PDSO-G8

5.5 V

2.03 mm

1000000 Write/Erase Cycles

.25 MHz

5.23 mm

Not Qualified

MICROWIRE

2048 bit

1.8 V

e4

.00001 Amp

5.255 mm

CAT93C57WE-1.8-GT2REVE

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE

8

1.27 mm

125 Cel

128X16

128

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

5.5 V

1.75 mm

.25 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

1.8 V

e4

40

260

4.9 mm

CAT93C86SE-TE13REVC

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1024 words

5

16

SMALL OUTLINE

8

1.27 mm

125 Cel

1KX16

1K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.75 mm

1 MHz

3.9 mm

Not Qualified

MICROWIRE

16384 bit

2.5 V

e0

4.9 mm

CAT93C66ZD4A-1.8-E

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

3 mA

256 words

5

2/5

16

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.12,25

8

EEPROMs

100

.65 mm

105 Cel

256X16

256

-40 Cel

MATTE TIN

DUAL

SOFTWARE

S-PDSO-N8

1

5.5 V

.8 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

MICROWIRE

4096 bit

4.5 V

IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN

e3

.00001 Amp

3 mm

CAT93C66VET2REVE

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

16

SMALL OUTLINE

8

100

1.27 mm

125 Cel

256X16

256

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

5.5 V

1.75 mm

.5 MHz

3.9 mm

Not Qualified

MICROWIRE

4096 bit

2.5 V

100 YEAR DATA RETENTION

e3

4.9 mm

CAT93C86WE-G

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

1024 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

125 Cel

1KX16

1K

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

3 MHz

3.9 mm

Not Qualified

MICROWIRE

16384 bit

4.5 V

IT ALSO OPERATES AT 1MHZ AT 2.5MIN

e3

.00001 Amp

4.9 mm

CAT93C76BVI-GT3L

Onsemi

EEPROM

OTHER

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

16

SMALL OUTLINE

8

1.27 mm

85 Cel

512X16

512

-20 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

5.5 V

1.75 mm

4 MHz

3.9 mm

MICROWIRE

8192 bit

1.65 V

e4

30

260

4.9 mm

CAT93C57YA-1.8

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

2/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

8

EEPROMs

100

.65 mm

105 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

6 V

1.1 mm

1000000 Write/Erase Cycles

.25 MHz

3 mm

Not Qualified

MICROWIRE

2048 bit

1.8 V

1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION

e3

.00001 Amp

4.4 mm

CAT93C56RD4E-1.8TE13

Onsemi

EEPROM

AUTOMOTIVE

8

SON

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE

8

125 Cel

128X16

128

-40 Cel

TIN LEAD

DUAL

S-XDSO-N8

1

6 V

.25 MHz

Not Qualified

MICROWIRE

2048 bit

1.8 V

e0

CAT130019TWI-G

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

64 words

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

64X16

64

-40 Cel

DUAL

SOFTWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

MICROWIRE

1024 bit

CAT93C86ZD4E-1.8TE13

Onsemi

EEPROM

AUTOMOTIVE

8

SON

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

1024 words

5

16

SMALL OUTLINE

8

125 Cel

1KX16

1K

-40 Cel

MATTE TIN

DUAL

S-XDSO-N8

1

6 V

.5 MHz

Not Qualified

MICROWIRE

16384 bit

1.8 V

e3

CAT93C57WI-TE13

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE

8

100

1.27 mm

85 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

6 V

1.75 mm

.5 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

2.5 V

1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION

e3

4.9 mm

CAT64LC20P

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

3 mA

128 words

3.3

3/5

16

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

3-STATE

128X16

128

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDIP-T8

6 V

4.57 mm

1000000 Write/Erase Cycles

1 MHz

7.62 mm

Not Qualified

10 ms

SPI

2048 bit

2.5 V

SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

.000003 Amp

9.59 mm

CAT130011ZWI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

64 words

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

64X16

64

-40 Cel

DUAL

SOFTWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

MICROWIRE

1024 bit

CAT93C57WI-GE

Onsemi

EEPROM CARD

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

4.5 V

IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN

e3

.00001 Amp

4.9 mm

2.7

CAT150021MWI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

2048 words

5

5

1

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

2KX1

2K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

10 MHz

3.9 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e4

.00002 Amp

4.9 mm

CAT93C66YE-E

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

5

3/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

8

EEPROMs

100

.65 mm

125 Cel

256X16

256

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

MICROWIRE

4096 bit

4.5 V

IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN

e3

.00001 Amp

4.4 mm

CAT93C57ZD4E-1.8-GREVE

Onsemi

EEPROM

AUTOMOTIVE

8

HVSON

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

8

.65 mm

125 Cel

128X16

128

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

S-XDSO-N8

5.5 V

.8 mm

.5 MHz

3 mm

Not Qualified

MICROWIRE

2048 bit

1.8 V

e4

40

260

3 mm

CAT93C86XA-TE13REVC

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1024 words

5

16

SMALL OUTLINE

8

1.27 mm

105 Cel

1KX16

1K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

6 V

2.03 mm

1 MHz

5.25 mm

Not Qualified

MICROWIRE

16384 bit

2.5 V

e3

5.3 mm

CAT93C66JI-2.7TE7

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

8

SMALL OUTLINE

16

1.27 mm

85 Cel

512X8

512

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.75 mm

.5 MHz

3.9 mm

Not Qualified

10 ms

MICROWIRE

4096 bit

2.7 V

MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

4.9 mm

CAT93C86LE-1.8-G

Onsemi

EEPROM

AUTOMOTIVE

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

3 mA

1024 words

5

2/5

16

IN-LINE

DIP8,.3

8

EEPROMs

100

2.54 mm

125 Cel

1KX16

1K

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDIP-T8

1

5.5 V

5.33 mm

1000000 Write/Erase Cycles

3 MHz

7.62 mm

Not Qualified

MICROWIRE

16384 bit

4.5 V

IT ALSO OPERATES AT 0.5MHZ AT 1.8MIN

e3

.00001 Amp

9.27 mm

CAT93C56WI-1.8T2REVE

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE

8

1.27 mm

85 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

5.5 V

1.75 mm

.25 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

1.8 V

e3

4.9 mm

CAT93C56ZD4I-REVE

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

8

.65 mm

85 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

S-XDSO-N8

5.5 V

.8 mm

.5 MHz

3 mm

Not Qualified

MICROWIRE

2048 bit

2.5 V

e3

3 mm

CAT93C66SI-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

16

SMALL OUTLINE

8

100

1.27 mm

85 Cel

256X16

256

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.75 mm

.25 MHz

3.9 mm

Not Qualified

MICROWIRE

4096 bit

1.8 V

1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION

e0

4.9 mm

CAT93C66X-TE7

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512X8

512

0 Cel

MATTE TIN

DUAL

R-PDSO-G8

5.5 V

2.03 mm

1 MHz

5.25 mm

Not Qualified

10 ms

MICROWIRE

4096 bit

4.5 V

MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE

e3

5.3 mm

CAT64LC40JATE13

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

4.5

3/5

16

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

105 Cel

256X16

256

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1000000 Write/Erase Cycles

1 MHz

Not Qualified

10 ms

SPI

4096 bit

2.5 V

e0

.000003 Amp

CAT93C86AS-2.5TE7

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1024 words

16

SMALL OUTLINE

1.27 mm

70 Cel

1KX16

1K

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.75 mm

.5 MHz

3.9 mm

Not Qualified

10 ms

MICROWIRE

16384 bit

2.5 V

MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

4.9 mm

CAT140081RWI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

8192 words

3

3/5

1

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

8KX1

8K

-40 Cel

NICKEL PALLADIUM GOLD

1010DMMR

DUAL

SOFTWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

8192 bit

2.5 V

e4

.000017 Amp

4.9 mm

3

CAV93C76YE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.65 mm

125 Cel

512X16

512

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

2 MHz

3 mm

MICROWIRE

8192 bit

2.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

4.4 mm

CAT93C56AKI-2.7TE7

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

16

SMALL OUTLINE

1.27 mm

85 Cel

128X16

128

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

2.03 mm

.5 MHz

5.25 mm

Not Qualified

10 ms

MICROWIRE

2048 bit

2.7 V

MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

5.3 mm

CAT93C76V-TE13REVA

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

16

SMALL OUTLINE

8

1.27 mm

70 Cel

512X16

512

0 Cel

MATTE TIN

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3 MHz

3.9 mm

Not Qualified

MICROWIRE

8192 bit

2.5 V

e3

4.9 mm

CAT93C66WA-1.8-GE

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

5

2/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

105 Cel

256X16

256

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

MICROWIRE

4096 bit

4.5 V

IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN

e3

.00001 Amp

4.9 mm

CAT93C56WI-E

Onsemi

EEPROM CARD

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

4.5 V

IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN

e3

.00001 Amp

4.9 mm

2.7

CAT93C56WI-1.8-T3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

2/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

128X16

128

-40 Cel

DUAL

SOFTWARE

R-PDSO-G8

5.5 V

1000000 Write/Erase Cycles

1 MHz

Not Qualified

10 ms

MICROWIRE

2048 bit

4.5 V

Also operates at 1.8V and 2.5V

.00001 Amp

CAS24LS128C4UTR

Onsemi

EEPROM

INDUSTRIAL

4

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

16384 words

5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16KX8

16K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B4

5.5 V

.3 mm

1 MHz

.84 mm

5 ms

I2C

131072 bit

1.6 V

e1

.84 mm

CAT93C56WE-1.8-T3E

Onsemi

EEPROM CARD

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

2/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

125 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

4.5 V

IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN

e3

.00001 Amp

4.9 mm

2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.