Varactor Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BB639C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1		Not Qualified		39 pF			7.01 %	35 V				SILICON	9.5
BB639CE7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V					1				39 pF							260
BB639CE7908HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE																															NOT SPECIFIED	NOT SPECIFIED
BBY66-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors						1				68.7 pF							260
MA45439-287T	TE Connectivity	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	1500	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN LEAD	R-PDSO-G3			Not Qualified		8.2 pF			10 %	30 V	e0			SILICON	4.5
MA46H120-W	M/a-com Technology Solutions	VARIABLE CAPACITANCE DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	3000	UNSPECIFIED	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-XDSO-N2			Not Qualified	.1 W	1.1 pF				20 V				GALLIUM ARSENIDE
SMV1206-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2			Not Qualified	.25 W	11.6 pF			8.62 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.45
SMV1231-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	15 V	175 Cel	-55 Cel		R-PBCC-N2	1			.75 W	1.58 pF	LOW NOISE		9.21 %	15 V			260	SILICON	1.45
SMV1235-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	750	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	S BAND		2		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-G3	1		Not Qualified	.25 W	11.5 pF	LOW NOISE		10 %	15 V	e3		260	SILICON	1.6
SMV1253-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	CHIP CARRIER		15 V	125 Cel	-55 Cel		R-PBCC-N2	1			.25 W	53 pF				15 V			260	SILICON	11
SMV1408-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE																					1											260	SILICON
1SV279,H3F	Toshiba	VARIABLE CAPACITANCE DIODE
1SV280(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE				YES					ABRUPT					SMALL OUTLINE	Varactors	15 V
1SV305,L3F	Toshiba	VARIABLE CAPACITANCE DIODE
BB148	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		39.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			30 V	e3			SILICON	14.5
BBY53-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	6 V			MATTE TIN	R-PDSO-G2	1		Not Qualified		5.3 pF				6 V	e3		260	SILICON	1.8
MGV125-08	M/a-com Technology Solutions	VARIABLE CAPACITANCE DIODE	UPPER	NO LEAD	1	YES	SQUARE	4000	UNSPECIFIED	SINGLE	HYPERABRUPT	KA BAND		1		UNCASED CHIP						S-XUUC-N1			Not Qualified	.25 W	.3 pF			16.66 %	22 V		NOT SPECIFIED	NOT SPECIFIED	GALLIUM ARSENIDE
SMV1213-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	12 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-G3	1		Not Qualified	.25 W	22 pF	LOW NOISE			12 V	e3	40	260	SILICON	2
SMV1232-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	15 V	175 Cel	-55 Cel		R-PBCC-N2	1		Not Qualified	.75 W	2.6 pF	LOW NOISE		10 %	15 V			260	SILICON	1.5
1N5470	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	30 V	e0			SILICON	2.9
1N5470C	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	2 %	30 V	e0			SILICON	2.9
BB149A,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		7.7 %	30 V	e3			SILICON	8.45
BB174X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V			TIN		1									e3	30	260
BB55502VH7912XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2					18.7 pF	LOW INDUCTANCE		6.67 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	6
JANTXV1N5470B	Defense Logistics Agency	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	UNSPECIFIED	SINGLE				1		LONG FORM						O-XALF-W2		ISOLATED	Not Qualified	.4 W	33 pF			5 %	30 V				SILICON	2.9	MIL-19500/436A
SVC236-TB-E	Onsemi	VARIABLE CAPACITANCE DIODE																			TIN BISMUTH		1									e6	30	260	SILICON
SMV1231-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	1.575 pF	LOW NOISE		9.21 %	15 V	e3	40	260	SILICON	1.5
SMV2202-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND	.05 uA	1	17.6 V	CHIP CARRIER		22 V	175 Cel	-55 Cel		R-PBCC-N2				.75 W	1.36 pF			12.92 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
1SV285(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE				YES					ABRUPT					SMALL OUTLINE	Varactors	10 V									4.5 pF
SMV1405-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	3200	PLASTIC/EPOXY	SINGLE	ABRUPT	S BAND		1		SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-F2	1		Not Qualified	.25 W	2.1 pF	LOW NOISE			30 V	e3	40	260	SILICON	4.1
SMV2201-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND	.05 uA	1	17.6 V	CHIP CARRIER		22 V	175 Cel	-55 Cel		R-PBCC-N2				.75 W	.86 pF			14.62 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BB545E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1				20 pF	LOW INDUCTANCE		7.5 %		e3			SILICON	6.3
SMV1213-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	12 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	22 pF				12 V	e3	40	260	SILICON	2
SMV1236-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	700	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			TIN	R-PDSO-F2	1		Not Qualified	.25 W	17 pF	LOW NOISE		8.82 %	15 V	e3		260	SILICON	1.6
BBY40,235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1				29 pF		TO-236AB	10.34 %	30 V	e3	30	260	SILICON	5
PC123	Api Technologies	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	50	GLASS	SINGLE	ABRUPT		.5 uA	1	30 V	LONG FORM	Varactors	30 V	175 Cel			O-LALF-W2		ISOLATED	Not Qualified	.4 W	15 pF	SUPER Q	DO-7	20 %					SILICON	4.6
SMV1248-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	700	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	17 pF				15 V	e3	40	260	SILICON	10.8
SMV1255-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	64 pF				15 V	e3	40	260	SILICON	11
SMV1265-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	1	26 V	CHIP CARRIER			125 Cel	-55 Cel		R-PBCC-N2				.25 W	13.8 pF			8.09 %	28 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	17.7
SMV1273-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE																					1											260	SILICON
SMV2020-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	22 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	1.37 pF	LOW NOISE		12.09 %	22 V	e3	40	260	SILICON	2.8
SMV2023-011LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	22 V			Matte Tin (Sn)	R-PDSO-G2	1		Not Qualified	.25 W	4.9 pF	LOW NOISE		10.2 %	22 V	e3	40	260	SILICON	4.2
1SV228	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE	Varactors	15 V	125 Cel			R-PDSO-G3			Not Qualified		30.5 pF	CAPACITANCE MATCHED TO 2.5%		6.55 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
1SV313	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	125 Cel		TIN LEAD	R-PDSO-G2			Not Qualified		7.85 pF			7.01 %		e0			SILICON	2.4
BB201,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified		95 pF		TO-236AB	6.81 %		e3	30	260	SILICON	3.1
MV2106	Motorola	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND		PLASTIC/EPOXY	SINGLE			.1 uA	1	25 V	CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-W2			Not Qualified	.28 W	18 pF			10 %	30 V	e0			SILICON	2.5
MV2115	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	100 pF		TO-92	10 %	30 V	e0			SILICON	2.6
MVAM115	Motorola	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.1 uA	1	15 V	CYLINDRICAL			125 Cel	-55 Cel	TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	500 pF	3% MATCHED SETS AVAILABLE	TO-226AC		18 V	e0			SILICON	15

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.